AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
نویسندگان
چکیده
منابع مشابه
Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2009
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.116.800